Description
FGH60N60SFD is an automotive-grade IGBT transistor produced by onsemi. The chip has good stability and impact resistance. It can continuously ensure the maximum drain-source current of FGH60N60SFD of 60A and the drain-source breakdown voltage of 600V. It can be used for solar inverters. Provides optimal performance for generator, UPS, welder and PFC applications.
| Model | FGH60N60SFD |
| Brand | ON/ON Semiconductor |
| Package | TO-247 |
| Maximum drain-source current | 60A |
| Drain-source breakdown voltage | 600V |
| RDS(ON)Max | mΩ |
Number of pins | 3 |
| Features | IGBT diode |
Leakage current | ua |
| Working temperature | -55℃~175℃ |
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